Title :
A physically based parameter extraction scheme for SCR models
Author :
Göhler, L. ; Langer, T. ; Sigg, J.
Author_Institution :
Univ. der Bundeswehr Munchen, Neubiberg, Germany
Abstract :
This paper presents a physically based parameter extraction scheme for SCR models. The methods are discussed and demonstrated with an example. The comparison between simulated and measured device behaviour shows agreement within 15% tolerance
Keywords :
parameter estimation; semiconductor device models; thyristors; SCR models; measured device behaviour; parameter determination; physically based parameter extraction scheme; silicon controlled rectifier; simulated device behaviour; Capacitance measurement; Charge carrier lifetime; Data mining; Doping profiles; Equations; Manufacturing; Paper technology; Parameter extraction; Semiconductor process modeling; Thyristors;
Conference_Titel :
Power Electronics Specialists Conference, 1997. PESC '97 Record., 28th Annual IEEE
Conference_Location :
St. Louis, MO
Print_ISBN :
0-7803-3840-5
DOI :
10.1109/PESC.1997.616712
