Title :
New approach for the assessment of the effect of plasma induced damage on MOS devices and subsequent design manual rules
Author_Institution :
Infineon Technol. AG, Munich
Abstract :
This paper develops a completely new approach for the definition of PID design rules which are relevant for IC design and also test structure layout. The required stress and measurement sequences for the assessment of PID effects and investigation of the design rules on the various geometries of MOS devices are described and discussed. The overall IC yield can be improved when some additional measures are considered and included in the product design.
Keywords :
MIS devices; integrated circuit design; integrated circuit reliability; semiconductor device reliability; MOS devices; PID design rules; plasma induced damage; Analog integrated circuits; Antenna measurements; Contacts; Degradation; Electrodes; Geometry; Integrated circuit interconnections; MOS devices; MOSFETs; Plasma devices;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2007. IRW 2007. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-1771-9
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2007.4469222
