Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels

The results show that devices with "as grown" SiO₂ have a much higher density of bulk oxide traps than devices after post oxidation annealing in NO environment. The amount of oxide fixed charge is clearly not affected by the annealing process. Devices fabricated on ion-implanted channels exhibit only a small increase in the bulk oxide trap density and the fixed charge. On the other hand, the density of the interface traps is increased dramatically. This suggests that the damage due to the ion-implantation process is mainly interfacial. In contrast to Si devices, this ion-implantation damage is not completely repaired, even after annealing.