Title :
A Modified Model for the Self Inductance of Metal Lines on Si
Author :
Huerta-Chua, Jesús ; Murphy-Arteaga, Roberto S.
Author_Institution :
Dept. of Electron., Nat. Inst. for Res. on Astrophys., Opt. & Electron., Tonantzintla
Abstract :
The effects of the self inductance associated with interconnection lines in integrated circuits have become extremely important when judging the performance of RF circuits, and thus, its modeling and characterization is an ongoing effort worldwide. This paper aims to contribute to this effort, proposing a modified model that is both simple and physically based, to calculate the self inductance of the metal lines used in modern IC designs. Most of the published models and techniques were analyzed and compared to experimental data, and one of these was modified to take into account the rectangular geometry of interconnect lines, showing a much better agreement with experiment. Interconnect lines designed for this purpose were fabricated using a standard CMOS process (AMIS 0.35 mum), and measured in the frequency range from 40 MHz to 50 GHz.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated circuit design; integrated circuit interconnections; radiofrequency integrated circuits; silicon; AMIS; RF circuits; Si; frequency 40 MHz to 50 GHz; integrated circuit designs; integrated circuit interconnection lines; metal lines; rectangular geometry; self inductance; silicon; size 0.35 mum; standard CMOS process; CMOS process; Geometry; Inductance; Integrated circuit interconnections; Integrated circuit modeling; Measurement standards; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Solid modeling; Model; inductance;
Conference_Titel :
Signal Integrity and High-Speed Interconnects, 2009. IMWS 2009. IEEE MTT-S International Microwave Workshop Series on
Conference_Location :
Guadalajara
Print_ISBN :
978-1-4244-2742-0
Electronic_ISBN :
978-1-4244-2743-7
DOI :
10.1109/IMWS.2009.4814920
