DocumentCode :
3154066
Title :
80V HVDMOS reliability characterization for 0.6μm and 0.35μm technologies
Author :
Heffernan, Colm ; Forde, Mark
Author_Institution :
Analog Devices, Limerick
fYear :
2007
fDate :
15-18 Oct. 2007
Firstpage :
121
Lastpage :
123
Abstract :
Integrated logic combined with high voltage (HV) capability for products such as low Ron MEMs switches, charge pumping applications and automotive products such as battery sensors and oil level sensors has led to the development of an 80 V HVDMOS process option at ADLK. The devices which dominate this development from a HV point of view are the 80V HVDMOS devices and the 80 V met2/thin film HV capacitor. This work summarizes the device level characterization using hot carrier (HC) testing to successfully qualify these HVNDMOS devices. In particular, the difficulties experienced in generating ´real´ hot carrier degradation data resulting from a thermal effect leading to abnormal hot carrier degradation during the initial characterization of HVNDMOS devices, is highlighted.
Keywords :
MOS integrated circuits; hot carriers; reliability; HVDMOS device; HVDMOS process option; HVDMOS reliability characterization; device level characterization; hot carrier degradation; hot carrier testing; integrated logic; thin film high voltage capacitor; voltage 80 V; Automotive engineering; Batteries; Charge pumps; Hot carriers; Logic devices; Microswitches; Petroleum; Sensor phenomena and characterization; Thermal degradation; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2007. IRW 2007. IEEE International
Conference_Location :
S. Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-1771-9
Electronic_ISBN :
1930-8841
Type :
conf
DOI :
10.1109/IRWS.2007.4469236
Filename :
4469236
Link To Document :
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