DocumentCode :
3154382
Title :
Gallium Nitride RF-devices: An overview on the development activities in Europe
Author :
Quay, Ruediger ; Mikulla, Michael
Author_Institution :
Fraunhofer IAF, Freiburg, Germany
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1
Lastpage :
1
Abstract :
Gallium Nitride is a key technology with high system impact for European industries for communication-, military-, and space-applications. This paper reviews the recent technical development activities of III-Nitride devices for RF-applications in Europe. After the completion of several significant research projects, the technical status is reviewed based on recent examples relevant to the state-of-the-art in Europe. Further, a European perspective for the industrialization and exploitation of this technology will be discussed.
Keywords :
Aerospace industry; Communication industry; Defense industry; Europe; Gallium nitride; III-V semiconductor materials; Space technology; Wide band gap semiconductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5518153
Filename :
5518153
Link To Document :
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