DocumentCode :
3154602
Title :
Optically tunable dispersion compensators based on semiconductor Gires-Tournois interferometer
Author :
Isomãki, A. ; Vainionpää, A. ; Lyytikäinen, J. ; Okhotnikov, O.G.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Finland
fYear :
2003
fDate :
22-27 June 2003
Firstpage :
260
Abstract :
We present here a Gires-Tournois interferometer type of device, where the group delay depends on the absorption changes in the active layer. The intensity-dependent absorption in MQW material was employed to control GTI reflectivity and, consequently, the device dispersion.
Keywords :
light absorption; light interferometers; optical dispersion; optical tuning; reflectivity; semiconductor devices; semiconductor quantum wells; MQW material; group delay; intensity-dependent absorption; optically tunable dispersion compensator; reflectivity control; semiconductor Gires-Tournois interferometer; Delay; Fiber nonlinear optics; Indium phosphide; Microcavities; Mirrors; Optical buffering; Optical interferometry; Optical pumping; Quantum well devices; Tunable circuits and devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
Type :
conf
DOI :
10.1109/CLEOE.2003.1312321
Filename :
1312321
Link To Document :
بازگشت