Temperature compensated VCO design for multi-band WCDMA transceiver application

Author

Karri, Satyanarayana Reddy ; Heng, Bun Suan ; Shen, C.H. ; Dehng, G.K.

Author_Institution

Ayer Rajah Crescent, Media Tek Singapore, Singapore, Singapore

fYear

2009

fDate

Jan. 9 2009-Dec. 11 2009

Firstpage

191

Lastpage

194

Abstract

A Voltage Controlled Oscillator (VCO) with temperature dependent frequency drift compensation technique has been implemented for 3G cellular application in commercial 0.18 um SiGe BiCMOS process. Additional MOS Varactors are used in the tank and biased with PTAT voltage to achieve the frequency drift compensation over temperature. With this new technique, VCO can achieve very stable frequency of 17.4 ppm/Â°C at 3.8 GHz and 16.5 ppm/Â°C at 3.3 GHz. Measurement results also show that VCO can cover frequency range of 3050 MHz to 4207 MHz with the phase noise of -116 dBc/Hz at 1 MHz offset and -138 dBc/Hz at 12.5 MHz. The VCO only draws 4 mA of current from 2.8 V supply voltage.

Keywords

3G mobile communication; BiCMOS integrated circuits; code division multiple access; compensation; transceivers; varactors; voltage-controlled oscillators; 3G cellular application; BiCMOS process; MOS Varactors; PTAT voltage; SiGe; frequency 3050 MHz to 4207 MHz; frequency drift compensation; frequency drift compensation technique; multiband WCDMA transceiver; size 0.18 mum; temperature compensated VCO design; voltage controlled oscillator; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Multiaccess communication; Silicon germanium; Temperature dependence; Transceivers; Varactors; Voltage; Voltage-controlled oscillators; KVCO; Phase Locked Loop; Phase noise; Synthesizer; VCO;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4244-5031-2

Electronic_ISBN

978-1-4244-5032-9

Type

conf

DOI

10.1109/RFIT.2009.5383689

Filename

5383689