DocumentCode :
3154754
Title :
On the accuracy of de-embedding technologies for on-wafer measurement up to 170GHz
Author :
Zhang, Bo ; Xiong, Yong-Zhong ; Wang, Lei ; Teck-Guan, Lim ; Zhuang, Yi-Qi ; Li, Le-Wei ; Yuan, Xiaojun
Author_Institution :
Xidian Univ., Xi´´an, China
fYear :
2009
fDate :
Jan. 9 2009-Dec. 11 2009
Firstpage :
284
Lastpage :
287
Abstract :
With the available operation frequency of circuit increasing into tens of gigahertz or even terahertz. The accurate device model will help designer to get excellent circuit performance and reduce design cycles. So for device modeling, the de-embedding technology becomes more critical. In this paper, a new S-parameter matrix calculation de-embedding technology is proposed. A comparison of different de-embedding up to 170 GHz is performed. The results showed that proposed method is with good agreement with measurement and EM 3D simulation result, even up to 170 GHz
Keywords :
S-parameters; equivalent circuits; S-parameter matrix calculation; de-embedding technologies; device modeling; on-wafer measurement; Circuit simulation; Circuit testing; Equivalent circuits; Frequency; Integrated circuit interconnections; Matrix converters; Probes; Scattering parameters; Submillimeter wave technology; Symmetric matrices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5031-2
Electronic_ISBN :
978-1-4244-5032-9
Type :
conf
DOI :
10.1109/RFIT.2009.5383696
Filename :
5383696
Link To Document :
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