Title :
Drain-avalanche induced hole injection and generation of interface traps in thin oxide MOS devices
Author :
Rakkhit, Rajat ; Haddad, Sameer ; Chang, Chi ; Yue, John
Author_Institution :
Adv. Micro Devices, Sunnyvale, CA, USA
Abstract :
Drain-avalanche-induced hot hole injection in thin oxide MOS devices, used in flash-type EEPROM memory cells, is discussed. A significant amount of acceptor-like interface traps are generated by the injected hot holes, spreading into the channel region. These generated interface traps dramatically alter the channel hot carrier characteristics of the device. This can adversely affect the programmability of a flash memory cell and can cause early window closure.<>
Keywords :
EPROM; electron traps; hot carriers; impact ionisation; insulated gate field effect transistors; interface electron states; MOS devices; MOSFET; acceptor-like interface traps; channel hot carrier characteristics; channel region; charge pumping; drain-avalanche-induced hot hole injection; early window closure; flash memory cell; flash-type EEPROM memory cells; interface traps; leakage current; n-channel transistors hot-carrier injection; programmability; Character generation; Current measurement; Degradation; EPROM; Flash memory cells; Hot carriers; MOS devices; MOSFETs; Stress; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/RELPHY.1990.66078
