Drain-avalanche induced hole injection and generation of interface traps in thin oxide MOS devices

Author

Rakkhit, Rajat ; Haddad, Sameer ; Chang, Chi ; Yue, John

Author_Institution

Adv. Micro Devices, Sunnyvale, CA, USA

fYear

1990

fDate

27-29 March 1990

Firstpage

150

Lastpage

153

Abstract

Drain-avalanche-induced hot hole injection in thin oxide MOS devices, used in flash-type EEPROM memory cells, is discussed. A significant amount of acceptor-like interface traps are generated by the injected hot holes, spreading into the channel region. These generated interface traps dramatically alter the channel hot carrier characteristics of the device. This can adversely affect the programmability of a flash memory cell and can cause early window closure.<>

Keywords

EPROM; electron traps; hot carriers; impact ionisation; insulated gate field effect transistors; interface electron states; MOS devices; MOSFET; acceptor-like interface traps; channel hot carrier characteristics; channel region; charge pumping; drain-avalanche-induced hot hole injection; early window closure; flash memory cell; flash-type EEPROM memory cells; interface traps; leakage current; n-channel transistors hot-carrier injection; programmability; Character generation; Current measurement; Degradation; EPROM; Flash memory cells; Hot carriers; MOS devices; MOSFETs; Stress; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1990. 28th Annual Proceedings., International

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/RELPHY.1990.66078

Filename

66078