A new unified model for channel thermal noise of deep sub-micron RFCMOS

Author

Ong, S.N. ; Chew, K.W.J. ; Yeo, K.S. ; Chan, L.H.K. ; Loo, X.S. ; Boon, C.C. ; Do, M.A.

Author_Institution

Nanyang Technol. Univ., Singapore, Singapore

fYear

2009

fDate

Jan. 9 2009-Dec. 11 2009

Firstpage

280

Lastpage

283

Abstract

A new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a 0.13 Â¿m RFCMOS technology process are compared to the channel noise directly extracted from RF noise measurements.

Keywords

CMOS integrated circuits; circuit simulation; integrated circuit noise; radiofrequency integrated circuits; thermal noise; channel thermal noise model; circuit simulation; deep submicron RFCMOS; size 0.13 mum; Circuit noise; Circuit simulation; Integrated circuit noise; MOSFETs; Noise generators; Noise measurement; Predictive models; Radio frequency; Semiconductor device noise; Thermal degradation; Channel thermal noise; MOSFET; high-frequency noise modeling; mobility degradation; noise of deep sub-micron MOSFET; vertical electric field;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4244-5031-2

Electronic_ISBN

978-1-4244-5032-9

Type

conf

DOI

10.1109/RFIT.2009.5383701

Filename

5383701