Title :
Novel mechanism for ultrafast optical nonlinearity in semiconductor laser amplifier using assist light
Author :
Tsurusawa, M. ; Usami, M. ; Matsushima, Y.
Author_Institution :
R&D Labs., KDD, Saitama, Japan
Abstract :
We have proposed and first demonstrated a novel mechanism for ultrafast optical nonlinearity in semiconductor laser amplifiers as saturable absorbers. We have obtained the reduced carrier lifetime of less than 70 ps by stimulated recombination due to a novel assist light. The further reduction of lifetime can be expected for shorter devices. This novel mechanism is promising for ultra-high repetition-rate gate function and noise reduction function, because there is little heat generation process through this fast stimulated emission.
Keywords :
carrier lifetime; high-speed optical techniques; optical saturable absorption; quantum well lasers; stimulated emission; waveguide lasers; 70 ps; MQW lasers; assist light; fast stimulated emission; heat generation p; lifetime reduction; multi quantum well lasers; noise reduction function; reduced carrier lifetime; saturable absorbers; semiconductor laser amplifier; stimulated recombination; ultra-high repetition-rate gate function; ultrafast optical nonlinearity; Charge carrier lifetime; Laser noise; Optical noise; Optical pumping; Optical signal processing; Optical waveguides; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission; Ultrafast optics;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619225
