Title :
Analytical modeling of the temperature dependent microwave noise in AlGaN/GaN HEMTs
Author :
Liu, Z.H. ; Ng, G.I. ; Arulkumaran, S.
fDate :
Jan. 9 2009-Dec. 11 2009
Abstract :
In this paper, we present the analytical modeling on the temperature dependent microwave noise in AlGaN/GaN HEMTs on Si substrate over a wide temperature range from -50 to 200°C. The noise source coefficients and small signal equivalent circuit parameters (ECPs) were extracted and their variations over temperature were fitted using a simple quadratic relationship. An analytical model for the overall noise parameters including temperature dependence is proposed based on the Pucel´s PRC model and verified with the measured temperature-dependent noise parameters. The feedback capacitance Cgd was found to be important to accurately simulate all the measured noise parameters over temperature.
Keywords :
III-V semiconductors; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; wide band gap semiconductors; HEMT; equivalent circuit parameters; feedback capacitance; noise source coefficients; substrate; temperature dependent microwave noise modeling; Aluminum gallium nitride; Analytical models; Circuit noise; Equivalent circuits; Gallium nitride; HEMTs; MODFETs; Noise measurement; Temperature dependence; Temperature distribution; GaN; HEMT; modeling; noise; temperature dependence;
Conference_Titel :
Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5031-2
Electronic_ISBN :
978-1-4244-5032-9
DOI :
10.1109/RFIT.2009.5383707
