Title :
Integration of RF MEMS switch with MMIC pHEMT and passive devices on GaAs
Author :
Lee, Kok-Yan ; Meng, Seah Yong ; Sen, Ang Kian ; Ing, Ng Geok ; Hong, Wang
Author_Institution :
DSO Nat. Labs., Singapore, Singapore
fDate :
Jan. 9 2009-Dec. 11 2009
Abstract :
Process integration of RF MEMS switches with MMIC pHEMT devices and passive components on GaAs has been developed. Measurement results of the RF MEMS switches showed a Cdown/Cup ratio of approximately 20:1, pHEMT devices with gate periphery of 1.2 mm show an Imax of 400 mA/mm, with fT and fmax of 60 GHz and 100 GHz, respectively. TaN resistors were measured at 65 ¿/¿ sheet resistance, the MIM capacitors have a capacitance of 550 pF/mm2 and the 5 turn spiral inductors have approximately 4.3 nH inductance.
Keywords :
III-V semiconductors; MIM devices; MMIC; field effect transistor switches; gallium arsenide; microswitches; passive networks; resistors; GaAs; MIM capacitors; MMIC pHEMT; RF MEMS switch; frequency 60 GHz; passive devices; Capacitance measurement; Electrical resistance measurement; Gallium arsenide; Inductance measurement; MIM capacitors; MMICs; PHEMTs; Radiofrequency microelectromechanical systems; Resistors; Switches; HEMT; MIM capacitors; MMIC; RF MEMS;
Conference_Titel :
Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5031-2
Electronic_ISBN :
978-1-4244-5032-9
DOI :
10.1109/RFIT.2009.5383708
