• DocumentCode
    3155025
  • Title

    A high power-handling RF MEMS tunable capacitor using quadruple series capacitor structure

  • Author

    Yamazaki, Hiroaki ; Ikehashi, Tamio ; Saito, Tomohiro ; Ogawa, Etsuji ; Masunaga, Takayuki ; Ohguro, Tatsuya ; Sugizaki, Yoshiaki ; Shibata, Hideki

  • Author_Institution
    Device Process Dev. Center, Toshiba Corp., Yokohama, Japan
  • fYear
    2010
  • fDate
    23-28 May 2010
  • Firstpage
    1138
  • Lastpage
    1141
  • Abstract
    This paper presents an RF MEMS tunable capacitor that achieves an excellent power-handling property with relatively low actuation voltage. The tunable capacitor consists of two fixed MIM (Metal-Insulator-Metal) capacitors and two MEMS capacitor elements, all connected in series. This quadruple series capacitor (QSC) structure enables reduction of the actuation voltage without sacrificing the power-handling capability, since the MIM capacitor reduces the RF voltage amplitude applied to the MEMS capacitors. The measured result demonstrates +36 dBm hot-switching at 85°C with 21V pull-in voltage.
  • Keywords
    MIM devices; capacitors; micromechanical devices; RF voltage amplitude; fixed metal-insulator-metal capacitors; high power-handling RF MEMS tunable capacitor; quadruple series capacitor structure; relatively low actuation voltage; temperature 85 degC; voltage 21 V; Dielectrics; Electrodes; Low voltage; MIM capacitors; Metal-insulator structures; Micromechanical devices; Radio frequency; Radiofrequency microelectromechanical systems; Springs; Tunable circuits and devices; Hot-switching; RF MEMS; power-handling; tunable capacitor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
  • Conference_Location
    Anaheim, CA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-6056-4
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2010.5518185
  • Filename
    5518185