Title :
A Ka-band high-pass distributed amplifier in 120nm SiGe BiCMOS
Author :
Gathman, Timothy D. ; Buckwalter, James F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
Abstract :
Traditional low-pass distributed amplifiers have been integrated into CMOS and BiCMOS for broadband applications; however, an alternate approach is distributing amplifier stages using a high pass synthetic transmission line. A high-pass distributed amplifier is suggested using a high-pass constant-k filter structure for both the input and output lines. The four stage amplifier has a gain of 8.3 dB over a 3dB bandwidth from 21 - 42.5 GHz. S11 is below -6.3 dB while S22 is below -9.2 dB. The minimum noise figure is 6.9 dB, and output P1dB is 0 dBm. This high-pass distributed amplifier was fabricated in a 120 nm SiGe BiCMOS process. The chip area is 0.6 × 1.0 mm including the pads and consumes 28 mW from a 1.7V supply.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MIMIC; MMIC amplifiers; distributed amplifiers; high-pass filters; millimetre wave amplifiers; wideband amplifiers; BiCMOS process; Ka-band high-pass distributed amplifier; SiGe; broadband applications; frequency 21 GHz to 42.5 GHz; gain 8.3 dB; high-pass constant-k filter structure; high-pass synthetic transmission line; low-pass distributed amplifiers; noise figure 6.9 dB; power 28 mW; size 120 nm; voltage 1.7 V; Band pass filters; Bandwidth; BiCMOS integrated circuits; Broadband amplifiers; Distributed amplifiers; Gain; Germanium silicon alloys; Noise figure; Silicon germanium; Transmission lines; Distributed amplifiers; broadband amplifiers; lumped element microwave circuits; microwave amplifiers;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5518190
