Title :
A back-gate coupling QVCO with Kvco linearization technique
Author :
Chiang, Yen-Chung ; Chang, Yu-Hsin
Author_Institution :
Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
fDate :
Jan. 9 2009-Dec. 11 2009
Abstract :
A 4.03 GHz-4.97 GHz quadrature voltage-controlled oscillator (QVCO) with back-gate coupling and VCO gain (KVCO) linearization techniques implemented in 0.35 ¿m SiGe BiCMOS process technology is presented. The back-gate coupling is adopted to improve the phase noise and to reduce the power consumption, and a voltage-level-shift circuit is used to linearize the VCO gain. The core circuit draws a 5.65 mA current from 3.0 V power supply. The measured phase noise at 1 MHz frequency offset is -102.76 dBc/Hz. And the measured KVCO is from 456 MHz/V to 744 MHz/V with a KVCO ratio of 1.63.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; linearisation techniques; voltage-controlled oscillators; BiCMOS process technology; Kvco linearization technique; back-gate coupling QVCO; current 5.65 mA; frequency 4.03 GHz to 4.97 GHz; phase noise; phase noise measurement; power consumption reduction; quadrature voltage-controlled oscillator; size 0.35 mum; voltage 3 V; voltage-level-shift circuit; BiCMOS integrated circuits; Coupling circuits; Frequency measurement; Germanium silicon alloys; Linearization techniques; Noise measurement; Phase measurement; Phase noise; Silicon germanium; Voltage-controlled oscillators; Back-gate coupling; Kvco linearization; QVCO; SiGe BiCMOS;
Conference_Titel :
Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5031-2
Electronic_ISBN :
978-1-4244-5032-9
DOI :
10.1109/RFIT.2009.5383720