Thermal management for flip-chip high power amplifiers utilizing carbon nanotube bumps

Author

Soga, Ikuo ; Kondo, Daiyu ; Yamaguchi, Yoshitaka ; Iwai, Taisuke ; Kikkawa, Toshihide ; Joshin, Kazukiyo

Author_Institution

Nanoelectron. Res. Center, Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2009

fDate

Jan. 9 2009-Dec. 11 2009

Firstpage

221

Lastpage

224

Abstract

Carbon nanotubes (CNTs) have been successfully used as source bumps for flip-chip high power amplifiers (HPAs). We have fabricated fine pitch CNT bumps with metal coating, which have been connected to electrodes close to the active areas of AlGaN/GaN HEMTs. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 28.8 mm utilizing CNT bumps and an operating voltage of 50 V exhibits an output power of 49.3 dBm at a frequency of 2.4 GHz.

Keywords

carbon nanotubes; flip-chip devices; high electron mobility transistors; power amplifiers; semiconductor device manufacture; thermal management (packaging); AlGaN-GaN; HEMT; carbon nanotube bumps; flip-chip high power amplifiers; frequency 2.4 GHz; thermal management; voltage 50 V; Aluminum gallium nitride; Carbon nanotubes; Coatings; Electrodes; Energy management; Gallium nitride; HEMTs; High power amplifiers; MODFETs; Thermal management; Carbon nanotubes; GaN; HEMT; flip-chip; high power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4244-5031-2

Electronic_ISBN

978-1-4244-5032-9

Type

conf

DOI

10.1109/RFIT.2009.5383724

Filename

5383724