Title :
Thermal management for flip-chip high power amplifiers utilizing carbon nanotube bumps
Author :
Soga, Ikuo ; Kondo, Daiyu ; Yamaguchi, Yoshitaka ; Iwai, Taisuke ; Kikkawa, Toshihide ; Joshin, Kazukiyo
Author_Institution :
Nanoelectron. Res. Center, Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
Jan. 9 2009-Dec. 11 2009
Abstract :
Carbon nanotubes (CNTs) have been successfully used as source bumps for flip-chip high power amplifiers (HPAs). We have fabricated fine pitch CNT bumps with metal coating, which have been connected to electrodes close to the active areas of AlGaN/GaN HEMTs. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 28.8 mm utilizing CNT bumps and an operating voltage of 50 V exhibits an output power of 49.3 dBm at a frequency of 2.4 GHz.
Keywords :
carbon nanotubes; flip-chip devices; high electron mobility transistors; power amplifiers; semiconductor device manufacture; thermal management (packaging); AlGaN-GaN; HEMT; carbon nanotube bumps; flip-chip high power amplifiers; frequency 2.4 GHz; thermal management; voltage 50 V; Aluminum gallium nitride; Carbon nanotubes; Coatings; Electrodes; Energy management; Gallium nitride; HEMTs; High power amplifiers; MODFETs; Thermal management; Carbon nanotubes; GaN; HEMT; flip-chip; high power amplifiers;
Conference_Titel :
Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5031-2
Electronic_ISBN :
978-1-4244-5032-9
DOI :
10.1109/RFIT.2009.5383724
