DocumentCode :
315562
Title :
SRAM yield estimation in the early stage of the design cycle
Author :
Kim, Von-Kyoung ; Chen, Tom
Author_Institution :
Sun Microsyst., SPARC Technol. Bus., Mountain View, CA, USA
fYear :
1997
fDate :
11-12 Aug 1997
Firstpage :
21
Lastpage :
26
Abstract :
This paper describes an early memory yield prediction model using a memory sensitive area model. The proposed sensitive area prediction model calculates the sensitive area of a memory block for a given process technology and memory capacity. The model is capable of predicting the yield of a memory block in the early design phase without the derailed knowledge of the physical layout. The use of such a model in the early design stage helps to improve product quality and to reduce cost
Keywords :
SRAM chips; integrated circuit layout; integrated circuit yield; statistical analysis; IC design; SRAM yield estimation; design cycle; early memory yield prediction model; memory sensitive area model; physical layout; Application specific integrated circuits; CMOS technology; Costs; Logic; Predictive models; Random access memory; SRAM chips; Sun; Wires; Yield estimation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Technology, Design and Testing, 1997. Proceedings., International Workshop on
Conference_Location :
San Jose, CA
ISSN :
1087-4852
Print_ISBN :
0-8186-8099-7
Type :
conf
DOI :
10.1109/MTDT.1997.619390
Filename :
619390
Link To Document :
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