DocumentCode :
3155827
Title :
Advanced design of a double Doherty power amplifier with a flat efficiency range
Author :
Lee, Yong-Sub ; Lee, Mun-Woo ; Kam, Sang-Ho ; Jeong, Yoon-Ha
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Gyungbuk, UK
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1500
Lastpage :
1503
Abstract :
This paper reports a new double Doherty power amplifier (DDPA) with a flat efficiency range, which consists of two-stage amplifiers. When the two-way DPA is used as the main peaking amplifier, the driving peaking cell with class-C bias turns the DPA off before the saturation of the main carrier amplifier. Three efficiency-peaking points are achieved with the additional Doherty operation by the main peaking amplifier after the saturation of the main carrier amplifier. For verifications, the driving and main amplifiers are designed and implemented with 2-W and 10-W GaN HEMTs, respectively, at 2.14 GHz. From the continuous wave (CW) results, three efficiency-peaking points are obtained at approximately 9-, 5-, and 0-dB back-off powers with over 42% drain efficiency. For one-carrier wide-band code division multiple access (WCDMA) signal, the DDPA shows good digital predistortion linearization performance.
Keywords :
III-V semiconductors; UHF power amplifiers; code division multiple access; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; class-C bias; digital predistortion linearization; double Doherty power amplifier; drain efficiency; driving peaking cell; efficiency range; frequency 2.14 GHz; main carrier amplifier; main peaking amplifier; power 10 W; power 2 W; two-stage amplifiers; wide-band code division multiple access; Broadband amplifiers; Gallium nitride; HEMTs; MODFETs; Multiaccess communication; Operational amplifiers; Peak to average power ratio; Power amplifiers; Predistortion; Switches; Doherty amplifier; efficiency; linearization; power amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5518217
Filename :
5518217
Link To Document :
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