DocumentCode :
3155833
Title :
On-wafer S-parameter de-embedding of silicon active and passive devices up to 170 GHz
Author :
Yau, Kenneth H K ; Sarkas, Ioannis ; Tomkins, Alexander ; Chevalier, Pascal ; Voinigescu, Sorin P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
600
Lastpage :
603
Abstract :
This paper compares for the first time open-short, split-through, and TRL de-embedding techniques for on-wafer characterization of silicon active and passive devices in the DC to 170 GHz range. It is demonstrated using transformers, capacitors, 65 nm MOSFETs and SiGe HBTs that, if the open and short dummies are designed to remain lumped through 170 GHz, there is almost no difference between the three de-embedding techniques. For transistor test structures with series ground inductance, a new TRL + short de-embedding method is proposed.
Keywords :
Ge-Si alloys; MOSFET; S-parameters; elemental semiconductors; heterojunction bipolar transistors; silicon; transformers; HBT; MOSFET; S-parameter; SiGe; TRL de-embedding technique; active device; capacitor; on-wafer characterization; open-short technique; passive device; series ground inductance; size 65 nm; split-through technique; transformer; transistor test structure; Calibration; Germanium silicon alloys; Impedance; Inductance; MOSFETs; Millimeter wave technology; Millimeter wave transistors; Scattering parameters; Silicon germanium; Testing; TRL; de-embedding; millimeter-wave;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5518218
Filename :
5518218
Link To Document :
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