High Efficiency HBV Multipliers

Author

Stake, Jan ; Bryllert, Tomas ; Emadi, T. Arezoo ; Sadeghi, Mahdad ; Vukusic, Josip

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

39

Lastpage

42

Abstract

We report on the design and MBE-growth of heterostructure barrier varactor (HBV) diode materials. The quality and performance of in-house HBV materials are presented. The design methodology and electro-thermal simulations of high power HBV multipliers for signal generation in the frequency range 100 - 300 GHz are also presented. Finally, a state-of-the-art tripler efficiency of 21% and a quintupler efficiency of 11% for W-band multipliers have been demonstrated

Keywords

frequency multipliers; millimetre wave diodes; signal generators; varactors; 100 to 300 GHz; 11 percent; 21 percent; MBE growth; W-band multipliers; design methodology; electrothermal simulations; heterostructure barrier varactor diode; high efficiency HBV multipliers; high power HBV multipliers; millimetre wave source; quintupler; signal generation; state-of-the-art tripler; Circuits; Doping; Frequency; Molecular beam epitaxial growth; Power generation; Schottky diodes; Semiconductor diodes; Temperature; Varactors; Voltage; Frequency multiplier; Heterostructure barrier varactor; Millimetre wave source; Reliability study;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282744

Filename

4057567