Title :
Detailed Analysis of DC-RF Dispersion in AlGaN/GaN HFETs using Waveform Measurements
Author :
Roff, Chris ; McGovern, Peter ; Benedikt, Johannes ; Tasker, Paul J. ; Balmer, R.S. ; Wallis, D.J. ; Hilton, K.P. ; Maclean, J.O. ; Hayes, D.G. ; Uren, M.J. ; Martin, T.
Author_Institution :
Cardiff Sch. of Eng., Cardiff Univ.
Abstract :
Detailed time-domain IV waveforms at RF frequencies are employed for characterisation of AlGaN/GaN HFETs in order to steer and advance device development. The IV time-domain data is used to isolate the separate effects of pinch-off and knee-walkout behaviour in limiting device performance. Furthermore, the waveform measurements which are obtained with a previously unseen level of detail, allowed the direct extraction of optimum device operating conditions
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; AlGaN-GaN; DC-RF dispersion; HFET; time-domain waveforms; waveform measurements; Aluminum gallium nitride; Dispersion; Gallium nitride; HEMTs; MODFETs; Microwave measurements; Pulse measurements; Radio frequency; Time domain analysis; Voltage;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282745
