Operation of RF Power MOSFETs under Proton Radiation

Author

Jiang, Ningyue ; Ma, Zhenqiang ; Li, Larry B.

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

46

Lastpage

49

Abstract

The effects of proton radiation on the RF power performance of multi-finger RF MOSFETs are, for the first time, reported in this work. Besides DC and small-signal AC characterizations, on-wafer large-signal high-power performance characteristics were also measured for multi-finger RF n-MOSFETs. The comparison between pre- and post-radiation shows that the power performance of RF MOSFETs exhibits excellent tolerance to high-fluence proton irradiation, revealing the potential of RF MOSFETs in the applications of power amplifiers for wireless application under severe radiation environment even without any intentional radiation hardening

Keywords

power MOSFET; proton effects; radiation hardening (electronics); DC characterization; RF power MOSFET; multifinger RF MOSFET; on-wafer large-signal high-power performance characteristics; power amplifiers; proton radiation; radiation hardening; small-signal AC characterizations; wireless application; Cutoff frequency; Degradation; Leakage current; MOSFET circuits; Microwave devices; Performance analysis; Performance evaluation; Protons; Radio frequency; Scattering parameters; Large-signal; MOSFETs; RF; load-pull; proton; radiation;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282746

Filename

4057569