Solid state reactions and barrier properties of the thin films Ti-W on the silicon

Ti-W and Al-Ti-W thin films on the single crystal silicon phase formation process were investigated by physical metallography methods in the process of the pulse heat treatment and vacuum annealing. Ti-W alloy films (150 nm thickness) were obtained by 50 at.%Ti+50 at.%W target magnetron sputtering. Aluminium film (100 nm thickness) was deposited on the such a way obtained Ti-W film. It was established that the Ti-W films of 150 nm thickness is the effective barrier for preventing aluminium and silicon interdiffusion in the temperature range 573-773 K for the Al-Ti-W-Si system.