Title :
Patterning of silicide layers by local oxidation
Author :
Klinkhammer, F. ; Dolle, M. ; Mantl, S.
Author_Institution :
Inst. fur Schicht- und Ionentech., Forschungszentrum Julich GmbH, Germany
Abstract :
Recently we have presented a novel method for patterning of silicide layers based on local oxidation. In this contribution we reexamine the physical diffusion model of local oxidation of epitaxial silicide layers and discuss its use for patterning. Oxidation of silicides is an important issue for silicon technology since it allows the formation of metallic interconnects with a protective SiO/sub 2/ coating.
Keywords :
cobalt compounds; metallic epitaxial layers; metallisation; oxidation; surface diffusion; CoSi/sub 2/; diffusion model; epitaxial silicide layer; local oxidation; metallic interconnect; patterning; protective SiO/sub 2/ coating; silicon technology; Atomic layer deposition; Molecular beam epitaxial growth; Oxidation; Protection; Scanning electron microscopy; Semiconductor process modeling; Silicides; Silicon; Stress; Substrates;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621120
