Title :
Temperature analysis of AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy and Transient Interferometric Mapping
Author :
Pichonat, E. ; Kuzmik, J. ; Bychikhin, S. ; Pogany, D. ; Poisson, M.A. ; Grimbert, B. ; Gaquière, C.
Author_Institution :
LASIR UMR, Villeneuve d´´Ascq cedex
Abstract :
The paper reports on the measurement of the temperature, i.e. self-heating effects, in active AlGaN/GaN HEMTs grown on sapphire substrate. Micro-Raman spectroscopy is used to measure temperature with 1 mum spatial resolution and 10degC temperature accuracy under the DC conditions. Transient interferometric method combined with a thermal simulation is used for analysis in the transient state. The results match well the results obtained by an electrical method performed both in DC and transient mode. The thermal resistance of 210 K/W (280 K/W) has been determined for 8 (2) finger device
Keywords :
III-V semiconductors; Raman spectroscopy; aluminium compounds; gallium compounds; high electron mobility transistors; sapphire; temperature measurement; AlGaN-GaN; high-electron-mobility transistors; microRaman scattering spectroscopy; optical variables measurement; sapphire substrate; temperature analysis; temperature measurement; thermal variables measurement; transient interferometric mapping; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Scattering; Spatial resolution; Spectroscopy; Temperature measurement; Thermal resistance; Transient analysis; GaN; high-electron-mobility transistor (HEMT); micro-Raman scattering; optical variables measurement; thermal variables measurement;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282748
