Temperature analysis of AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy and Transient Interferometric Mapping

Author

Pichonat, E. ; Kuzmik, J. ; Bychikhin, S. ; Pogany, D. ; Poisson, M.A. ; Grimbert, B. ; Gaquière, C.

Author_Institution

LASIR UMR, Villeneuve d´´Ascq cedex

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

54

Lastpage

57

Abstract

The paper reports on the measurement of the temperature, i.e. self-heating effects, in active AlGaN/GaN HEMTs grown on sapphire substrate. Micro-Raman spectroscopy is used to measure temperature with 1 mum spatial resolution and 10degC temperature accuracy under the DC conditions. Transient interferometric method combined with a thermal simulation is used for analysis in the transient state. The results match well the results obtained by an electrical method performed both in DC and transient mode. The thermal resistance of 210 K/W (280 K/W) has been determined for 8 (2) finger device

Keywords

III-V semiconductors; Raman spectroscopy; aluminium compounds; gallium compounds; high electron mobility transistors; sapphire; temperature measurement; AlGaN-GaN; high-electron-mobility transistors; microRaman scattering spectroscopy; optical variables measurement; sapphire substrate; temperature analysis; temperature measurement; thermal variables measurement; transient interferometric mapping; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Scattering; Spatial resolution; Spectroscopy; Temperature measurement; Thermal resistance; Transient analysis; GaN; high-electron-mobility transistor (HEMT); micro-Raman scattering; optical variables measurement; thermal variables measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282748

Filename

4057571