DocumentCode :
315616
Title :
A history of low power electronics: how it began and where it´s headed
Author :
Meindl, James D.
Author_Institution :
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
1997
fDate :
18-20 Aug. 1997
Firstpage :
149
Lastpage :
151
Abstract :
The invention of the bipolar transistor in 1948 and the integrated circuit in 1958 as well as the announcement of CMOS logic circuits in 1963 demonstrated the critical basis for modern low power electronics. Future opportunities for low power gigascale integration will be governed by a hierarchy of physical limits whose five levels can be codified as: (1) fundamental, (2) material, (3) device, (4) circuit and (5) system. Through analysis of the attributes of a hypothetical quasi-asymptotic 10 nm single electron MOSFET and its local interconnection network, it is apparent that such a device would have an unaffordably large switching error rate. However, it is feasible that low power electronics may well achieve a capability within several hundred times the switching energy of the 10 nm single electron MOSFET.
Keywords :
CMOS integrated circuits; MOSFET; history; CMOS ICs; history; integrated circuit; local interconnection network; low power electronics; single electron MOSFET; switching error rate; Bipolar integrated circuits; Bipolar transistors; CMOS integrated circuits; CMOS logic circuits; Electrons; History; IEEE news; Low power electronics; MOSFET circuits; Multiprocessor interconnection networks;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Power Electronics and Design, 1997. Proceedings., 1997 International Symposium on
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-89791-903-3
Type :
conf
Filename :
621267
Link To Document :
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