• DocumentCode
    315616
  • Title

    A history of low power electronics: how it began and where it´s headed

  • Author

    Meindl, James D.

  • Author_Institution
    Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    1997
  • fDate
    18-20 Aug. 1997
  • Firstpage
    149
  • Lastpage
    151
  • Abstract
    The invention of the bipolar transistor in 1948 and the integrated circuit in 1958 as well as the announcement of CMOS logic circuits in 1963 demonstrated the critical basis for modern low power electronics. Future opportunities for low power gigascale integration will be governed by a hierarchy of physical limits whose five levels can be codified as: (1) fundamental, (2) material, (3) device, (4) circuit and (5) system. Through analysis of the attributes of a hypothetical quasi-asymptotic 10 nm single electron MOSFET and its local interconnection network, it is apparent that such a device would have an unaffordably large switching error rate. However, it is feasible that low power electronics may well achieve a capability within several hundred times the switching energy of the 10 nm single electron MOSFET.
  • Keywords
    CMOS integrated circuits; MOSFET; history; CMOS ICs; history; integrated circuit; local interconnection network; low power electronics; single electron MOSFET; switching error rate; Bipolar integrated circuits; Bipolar transistors; CMOS integrated circuits; CMOS logic circuits; Electrons; History; IEEE news; Low power electronics; MOSFET circuits; Multiprocessor interconnection networks;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Power Electronics and Design, 1997. Proceedings., 1997 International Symposium on
  • Conference_Location
    Monterey, CA, USA
  • Print_ISBN
    0-89791-903-3
  • Type

    conf

  • Filename
    621267