Title :
Enhanced Schottky Gate and Pulsed IV Characteristics of AlGaN-GaN HEMT on Si with Gate-annealing and SiNX Passivation
Author :
Her, Jin-Cherl ; Kim, Sung-Won ; Jang, Kyung-Chul ; Seol, Gyung-Seon ; Han, Min-Koo ; Oh, Jae-Eung ; Seo, Kwang-Seok
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ.
Abstract :
Using the post-gate-annealing, the SiNx passivation and the post-passivation-annealing, the gate characteristics of 0.4 mum Al 0.26GaN-GaN HEMT on Si were successfully improved. With SiNx passivation using remote-plasma enhanced chemical vapor deposition, the current collapse was effectively suppressed. And it was found that annealing after passivation can improve the gate characteristics without serious change of the pulsed IV characteristics of the devices. As a result, maximum extrinsic transconductance, IDSS and pulsed drain-source current are increased by 12 %, 32 % and 31 %, respectively. And the gate-drain breakdown voltage was increased from 23 V to 80 V
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; passivation; plasma CVD; silicon compounds; wide band gap semiconductors; 0.4 micron; 23 V; 80 V; AlGaN-GaN; HEMT; Schottky contacts; Schottky gate; SiN; SiNx passivation; current collapse; gate annealing; high electron mobility transistor; pulsed IV characteristics; remote plasma enhanced chemical vapor deposition; surfaces; trapping; Aluminum gallium nitride; Annealing; Chemical vapor deposition; Computer science; Electronics packaging; HEMTs; Passivation; Plasma temperature; Pulse measurements; Substrates; Annealing; Schottky contacts; high electron mobility transistor; passivation; surfaces; trapping;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282752
