DocumentCode
3156191
Title
Antiferroelectric to ferroelectric phase switching thin films in the lead zirconate stannate titanate solid solution system
Author
Gaskey, C.J. ; Udayakumar, K.R. ; Chen, H.D. ; Cross, L.E.
Author_Institution
Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
fYear
1991
fDate
33457
Firstpage
416
Lastpage
418
Abstract
Thin films of lead zirconate stannate titanate (PSZT) with slight additions of niobium and lanthanum have been prepared by the sol-gel, spin coat process. Antiferroelectric tetragonal and orthorhombic compositions have been evaluated on the criteria of P-E loop squareness, maximum polarization and field induced strain for the applications of energy storage and conversion in integrated devices. The orthorhombic compositions in both the niobium and lanthanum doped systems have shown square loop hysteretic behavior with large switchable polarizations (30-40 μC/cm2), and field-induced strains of 0.33% have been measured in the niobium doped system, thus both systems provide attractive possibilities for practical use
Keywords
dielectric hysteresis; dielectric polarisation; ferroelectric materials; ferroelectric switching; ferroelectric thin films; lead compounds; niobium; piezoceramics; sol-gel processing; P-E loop squareness; PZT; PbZrO3TiO3; antiferroelectric to ferroelectric phase switching; energy storage; field induced strain; integrated devices; maximum polarization; orthorhombic; sol-gel processing; solid solution; spin coat process; square loop hysteretic behavior; tetragonal; thin films; Capacitive sensors; Energy storage; Ferroelectric materials; Hysteresis; Lanthanum; Niobium; Polarization; Strain measurement; Titanium compounds; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location
University Park, PA
Print_ISBN
0-7803-1847-1
Type
conf
DOI
10.1109/ISAF.1994.522390
Filename
522390
Link To Document