• DocumentCode
    3156191
  • Title

    Antiferroelectric to ferroelectric phase switching thin films in the lead zirconate stannate titanate solid solution system

  • Author

    Gaskey, C.J. ; Udayakumar, K.R. ; Chen, H.D. ; Cross, L.E.

  • Author_Institution
    Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
  • fYear
    1991
  • fDate
    33457
  • Firstpage
    416
  • Lastpage
    418
  • Abstract
    Thin films of lead zirconate stannate titanate (PSZT) with slight additions of niobium and lanthanum have been prepared by the sol-gel, spin coat process. Antiferroelectric tetragonal and orthorhombic compositions have been evaluated on the criteria of P-E loop squareness, maximum polarization and field induced strain for the applications of energy storage and conversion in integrated devices. The orthorhombic compositions in both the niobium and lanthanum doped systems have shown square loop hysteretic behavior with large switchable polarizations (30-40 μC/cm2), and field-induced strains of 0.33% have been measured in the niobium doped system, thus both systems provide attractive possibilities for practical use
  • Keywords
    dielectric hysteresis; dielectric polarisation; ferroelectric materials; ferroelectric switching; ferroelectric thin films; lead compounds; niobium; piezoceramics; sol-gel processing; P-E loop squareness; PZT; PbZrO3TiO3; antiferroelectric to ferroelectric phase switching; energy storage; field induced strain; integrated devices; maximum polarization; orthorhombic; sol-gel processing; solid solution; spin coat process; square loop hysteretic behavior; tetragonal; thin films; Capacitive sensors; Energy storage; Ferroelectric materials; Hysteresis; Lanthanum; Niobium; Polarization; Strain measurement; Titanium compounds; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
  • Conference_Location
    University Park, PA
  • Print_ISBN
    0-7803-1847-1
  • Type

    conf

  • DOI
    10.1109/ISAF.1994.522390
  • Filename
    522390