Title :
Design and Analysis of a 34 dBm Ka-Band GaN High Power Amplifier MMIC
Author :
van Heijningen, M. ; van Vliet, Frank E. ; Quay, R. ; van Raay, Friedbert ; Seelmann-Eggebert, M.
Author_Institution :
TNO Defence, Security & Safety, Hague
Abstract :
This paper presents the design and analysis issues related to the use of recent GaN technologies for realizing high power millimeter wave MMICs. Two GaN Ka-band amplifier MMICs have been designed, fabricated and characterized. The small-signal and power measurement results are presented for both amplifiers, with an excellent output power of 34.1 dBm at 27 GHz for the 2-stage power amplifier MMIC. Both MMICs have a very good yield and performance, even more so in regard of the current state-of-the-art. The observed deviations between the original simulation and measurements have been explained by extensive use of 3D EM simulations of the coplanar passive structures
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; millimetre wave power amplifiers; wide band gap semiconductors; 27 GHz; 3D EM simulations; GaN; Ka-band high power amplifier; coplanar passive structures; millimeter wave MMIC; power measurement; small-signal measurement; Aluminum gallium nitride; Gallium nitride; High power amplifiers; MMICs; Millimeter wave technology; Millimeter wave transistors; Power amplifiers; Power generation; Silicon carbide; Substrates; GaN; MMIC power amplifiers;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282754
