Generic robust LVCMOS-compatible control logic for GaAs HEMT switches

Author

van Wanum, M. ; van der Bent, Gijs ; Rodenburg, M. ; de Hek, A.P.

Author_Institution

TNO Defence, Security & Safety, Hague

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

83

Lastpage

86

Abstract

Robust digital control logic for an X-band five-bit digital attenuator and six-bit phase shifter has been developed and tested. The circuit uses an innovative combination of feedback and feed forward. The devices have been developed in the 6-inch 0.5 mum power pHEMT process (PP50-10) of WIN Semiconductors. The use of this process results in cost effective devices with a high power capability

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC phase shifters; digital control; field effect transistor switches; gallium arsenide; robust control; wide band gap semiconductors; 0.5 micron; FET digital integrated circuits; FET switches; GaAs; HEMT switches; LVCMOS control logic; MMIC phase shifters; PP50-10; WIN Semiconductors; X-band; digital attenuator; phase shifter; power pHEMT process; robust digital control logic; Attenuators; Circuit testing; Digital control; Gallium arsenide; HEMTs; Logic devices; Logic testing; Phase shifters; Power semiconductor switches; Robust control; Attenuators; FET digital integrated circuits; FET switches; MMIC phase shifters;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282756

Filename

4057579