Title :
Bias and Temperature Dependant Third Order Nonlinearity of GaAs DHBTs and its use in Extracting Thermal Resistance
Author :
Khan, A. ; Rezazadeh, A.A.
Author_Institution :
Electromagn. Res. Centre, Manchester Univ.
Abstract :
The effect of various biasing conditions and temperature on third order two-tone intermodulation distortion characteristics of InGaP/GaAs microwave DHBTs is studied. The experimental results indicated that the variations in the third order nonlinearity characteristic dip are mainly due to changes in the DC current gain of the device at a fixed and relatively low collector current. Changes in the AC power gain (with bias and temperature) only become important at higher collector currents. These variations in the dip of the third order nonlinearity are used to calculate thermal resistance at low power optimal operating point of the dip. The results are compared with other methods of extracting thermal resistance from DC characteristics. This analysis has been reported for the first time and is important in understanding the non-linear characteristics of microwave device
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; intermodulation distortion; microwave bipolar transistors; AC power gain; DC current gain; InGaP-GaAs; biasing conditions; collector current; heterojunction bipolar transistor; microwave DHBT; microwave device; thermal resistance extraction; third order nonlinearity; third order two-tone intermodulation distortion characteristics; Double heterojunction bipolar transistors; Electromagnetic heating; Frequency; Gallium arsenide; Intermodulation distortion; Microwave devices; Nonlinear distortion; Power dissipation; Temperature dependence; Thermal resistance;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282763
