Title :
GaN technology for microwave and millimeter wave applications
Author :
Kolias, Nicholas J. ; Whelan, C.S. ; Kazior, Thomas E. ; Smith, K.V.
Author_Institution :
Raytheon Company, Andover, United States
Abstract :
After many years of development to improve the material and devices, GaN technology is now in production and poised to revolutionize many of today´s Radar and Communication systems. In this paper we present an overview of GaN development, focusing on reliability, affordability, and defense applications.
Keywords :
Gallium nitride; Microwave devices; Microwave technology; Millimeter wave communication; Millimeter wave devices; Millimeter wave radar; Millimeter wave technology; Production systems; Radar applications; Wide band gap semiconductors;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5518245
