4-8 GHz Low Noise Amplifiers using metamorphic HEMT Technology

Author

Kelly, Matthew ; Angelov, Iltcho ; Starski, J. Piotr ; Wadefalk, Niklas ; Zirath, Herbert

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Gothenburg

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

118

Lastpage

121

Abstract

This paper describes two metamorphic high electron mobility transistor (mHEMT) amplifiers with low noise in the frequency band 4-8 GHz. One amplifier contains the complete circuitry on a monolithic microwave integrated circuit (MMIC) chip and the other is configured with the input network on a low loss duroid substate together with an MMIC. The measurements at room temperature for the MMIC gave a gain of 28plusmn1 dB and a typical noise temperature of 56 K. The measurements at room temperature for the hybrid-MMIC gave a gain of 29plusmn2 dB and a minimum noise temperature of 41 K. When cooled to 20 K the hybrid-MMIC obtained a minimum noise temperature of 6 K. The hybrid-MMIC is compared to InP based hybrid LNAs at cryogenic temperature

Keywords

HEMT integrated circuits; MMIC; cryogenic electronics; indium compounds; low noise amplifiers; 4 to 8 GHz; 41 K; 56 K; 6 K; MMIC; cryogenic temperature; input network; low loss duroid substate; low noise amplifiers; metamorphic HEMT; metamorphic high electron metamorphic transistor; monolithic microwave integrated circuit chip; noise temperature; Gain measurement; Integrated circuit measurements; Integrated circuit noise; Integrated circuit technology; Low-noise amplifiers; MMICs; Noise measurement; Semiconductor device measurement; Temperature measurement; mHEMTs; Cryogenic; MMIC; low noise amplifier (LNA); metamorphic high electron metamorphic transistor (mHEMT); noise temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282765

Filename

4057588