DocumentCode :
315655
Title :
Power estimation considering statistical IC parametric variations
Author :
Pilli, S. ; Sapatnekar, Sachin S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Eng., Iowa State Univ., Ames, IA, USA
Volume :
3
fYear :
1997
fDate :
9-12 Jun 1997
Firstpage :
1524
Abstract :
Statistical perturbations of process parameters may change propagation delays and alter the switching activity in the circuit due to glitches. In this paper, the problem of estimating glitch/hazard power in CMOS circuits is addressed. A probabilistic min/max delay model is used, where the variation of delays between the minimum and maximum delay may follow any given discrete probability distribution. The first part of this work considers glitching activity assuming fixed gate delays with instantaneous rise/fall times. Next, this is refined to incorporate the effects of fixed transition times. Experimental results on benchmark circuits show that a significant amount of power is dissipated in hazards and glitches and that the hazardous part of power dissipation is sensitive to variations in gate delays
Keywords :
CMOS integrated circuits; delays; integrated circuit modelling; CMOS circuit; IC process parameters; gate delay; glitch; hazard; min/max model; power estimation; probability distribution; propagation delay; statistical perturbations; switching activity; Circuit simulation; Delay estimation; Hazards; Power dissipation; Power engineering and energy; Power engineering computing; Probability; Propagation delay; Semiconductor device modeling; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1997. ISCAS '97., Proceedings of 1997 IEEE International Symposium on
Print_ISBN :
0-7803-3583-X
Type :
conf
DOI :
10.1109/ISCAS.1997.621418
Filename :
621418
Link To Document :
بازگشت