DocumentCode :
3156560
Title :
220 GHz Low-Noise Amplifier Modules for Radiometric Imaging Applications
Author :
Tessmann, A. ; Leuther, A. ; Kuri, M. ; Massler, H. ; Riessle, M. ; Essen, H. ; Stanko, S. ; Sommer, R. ; Zink, M. ; Stibal, R. ; Reinert, W. ; Schlechtweg, M.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg
fYear :
2006
fDate :
10-13 Sept. 2006
Firstpage :
137
Lastpage :
140
Abstract :
G-band low-noise amplifier (LNA) modules have been successfully developed for use in high-resolution radiometric imaging applications. The WR-5 waveguide modules contain a four-stage 220 GHz cascode LNA MMIC and two microstrip-to-waveguide transitions which were realized on 50 mum thick quartz substrates. The monolithic amplifier circuits were fabricated using a well proven 0.1 mum InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT) technology in combination with grounded coplanar waveguides (GCPW). Furthermore, an MMIC based 220 GHz direct detection radiometer was developed, for the first time, containing three amplifier modules connected in series and demonstrating a small-signal gain of more than 50 dB over the frequency range from 209 to 217 GHz
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium compounds; indium compounds; low noise amplifiers; millimetre wave amplifiers; millimetre wave imaging; wide band gap semiconductors; 0.1 micron; 220 GHz; 50 micron; InAlAs-InGaAs; MHEMT technology; WR-5 waveguide modules; cascode LNA MMIC; grounded coplanar waveguides; low-noise amplifier modules; metamorphic high electron mobility transistor; microstrip-to-waveguide transitions; monolithic amplifier circuits; passive imaging; quartz substrates; radiometric imaging; total power radiometer; Circuits; HEMTs; High-resolution imaging; Indium compounds; Indium gallium arsenide; Low-noise amplifiers; MMICs; Microstrip; Radiometry; Waveguide transitions; G-band; cascode; grounded coplanar waveguide (GCPW); low-noise amplifier (LNA); metamorphic high electron mobility transistor (MHEMT); monolithic microwave integrated circuit (MMIC); packaging; passive imaging; total power radiometer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
Type :
conf
DOI :
10.1109/EMICC.2006.282770
Filename :
4057593
Link To Document :
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