DocumentCode :
3156580
Title :
A GaAs HBT Low Power 24 GHz Downconverter with On-Chip Local-Oscillator
Author :
Meliani, C. ; Huber, M. ; Boeck, G. ; Heinrich, W.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin
fYear :
2006
fDate :
10-13 Sept. 2006
Firstpage :
141
Lastpage :
144
Abstract :
In this paper, the paper presents a low-power mixer with integrated local oscillator intended for use in a 24 GHz receiver front-end. The chip is realized using HBT GaAs technology. The voltage-controlled oscillator (VCO) provides a tuning range of 18% at a mean frequency of 21 GHz, with a low DC consumption of 21 mW. DC consumption of the mixer part is about 17 mW from a 3 V supply, with a mean gain of 14 dB and a sensitivity of -70 dBm. The MMIC demonstrates interesting potential for low-power RF terminals in the 24 GHz range
Keywords :
MMIC; gallium arsenide; heterojunction bipolar transistors; microwave mixers; microwave oscillators; microwave receivers; voltage-controlled oscillators; 21 mW; 24 GHz; 3 V; GaAs; HBT; MMIC; downconverter; low-power mixer; microwave receiver; on-chip local-oscillator; voltage-controlled oscillator; Circuits; Epitaxial layers; Gain; Gallium arsenide; Heterojunction bipolar transistors; Local oscillators; MMICs; Radio frequency; Voltage-controlled oscillators; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
Type :
conf
DOI :
10.1109/EMICC.2006.282771
Filename :
4057594
Link To Document :
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