An ultra-broadband robust LNA for defence applications in AlGaN/GaN technology

Author

Ciccognani, W. ; Limiti, E. ; Longhi, P.E. ; Mitrano, C. ; Nanni, A. ; Peroni, M.

Author_Institution

Electron. Eng. Dept., Univ. di Roma Tor Vergata, Rome, Italy

fYear

2010

fDate

23-28 May 2010

Firstpage

493

Lastpage

496

Abstract

The design, fabrication and test of a 2-18 GHz monolithic Low Noise Amplifier utilizing 0.25 μm AlGaN/GaN HEMT technology is reported. The measured noise figure of the amplifier is less than 4.7 dB over the 2 - 18 GHz frequency range, exhibiting a minimum of 3.3 dB at 3 GHz. The LNA gain is 23 dB. Even being a low-noise amplifier, the MMIC can withstand 10W input CW RF power, demonstrating no apparent degradation: to the authors knowledge this is the best RF LNA survivability reported to date in this frequency range using GaN technology.

Keywords

III-V semiconductors; MMIC; high electron mobility transistors; low noise amplifiers; AlGaN; AlGaN/GaN HEMT technology; AlGaN/GaN technology; GaN; MMIC; defence application; frequency 2 GHz to 18 GHz; low-noise amplifier; monolithic low noise amplifier; size 0.25 mum; ultra-broadband robust LNA; Aluminum gallium nitride; Fabrication; Frequency measurement; Gallium nitride; HEMTs; Low-noise amplifiers; Noise measurement; Noise robustness; Radio frequency; Testing; Electronic warfare; GaN; LNA; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5518253

Filename

5518253