High Performance PIN Diode in 0.18-μm SiGe BiCMOS Process for Broadband Monolithic Control Circuits

Author

Sun, Pinping ; Upadhyaya, Parag ; Wang, Le ; Jeong, Dong-Ho ; Heo, Deukhyoun

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

149

Lastpage

152

Abstract

This paper presents a novel high isolation and low insertion loss broadband PIN diode implemented in a standard 0.18 μm SiGe BiCMOS process for upper X-band and lower Ku band LEO satellite phased array communication systems. By optimizing distance between anode and cathode terminals, the PIN diode overcomes the limitation of the common SiGe process which do not have customized etching step to remove the N-epi layer to build a high performance vertical PIN diode. Measurement shows that the PIN diodes achieve less than 1.09 dB insertion loss and isolation between 39dB to 13.67dB over DC to 18 GHz frequency. The PIN diode performance shows great potential for development of high performance MMICs in the standard SiGe processes

Keywords

BiCMOS integrated circuits; Ge-Si alloys; microwave diodes; p-i-n diodes; satellite communication; 0 to 18 GHz; 0.18 micron; BiCMOS process; Ku band phased array communication; LEO satellite; SiGe; X-band phased array communication; broadband PIN diode; broadband monolithic control circuits; customized etching step; high performance PIN diode; system-on-chip; Anodes; Artificial satellites; BiCMOS integrated circuits; Communication standards; Communication system control; Germanium silicon alloys; Insertion loss; Low earth orbit satellites; Phased arrays; Silicon germanium; PIN diode; SiGe BiCMOS; diode; phased array communication systems; system-on-chip (SOC);

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282773

Filename

4057596