DocumentCode :
3156624
Title :
Time-resolved photoluminescence studies of carrier diffusion in Si-doped GaInN/GaN quantum wells
Author :
Olaizola, S.M. ; Skolnick, M.S. ; Mowbray, D.J. ; Fox, A.M. ; Parbrook, P.J.
Author_Institution :
University of Sheffield
fYear :
2003
fDate :
22-27 June 2003
Firstpage :
353
Lastpage :
353
Keywords :
Doping; Gallium nitride; Indium; Photoluminescence; Physics; Pulse measurements; Radiative recombination; Samarium; Semiconductor process modeling; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
Type :
conf
DOI :
10.1109/CLEOE.2003.1312414
Filename :
1312414
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3156624
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