DocumentCode
3156636
Title
First InP/GaAsSb/InP DHBT Ka-band MMIC Oscillator
Author
Xin Zhu ; Wang, Jing ; Pavlidis, Dimitris
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
fYear
2006
fDate
10-13 Sept. 2006
Firstpage
153
Lastpage
156
Abstract
The demonstration of the first MMIC oscillator using novel InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) is presented. The oscillator delivered an output power of 3.2 dBm at 34.9GHz with DC to RF conversion efficiency of 10.9%. The corresponding phase noise at 1MHz offset from the carrier frequency was -92dBc/Hz
Keywords
MMIC oscillators; bipolar MIMIC; bipolar MMIC; millimetre wave oscillators; 10.9 percent; 34.9 GHz; DHBT Ka-band MMIC oscillator; InP-GaAsSb-InP; double heterojunction bipolar transistors; phase noise; DH-HEMTs; Double heterojunction bipolar transistors; Frequency; Indium phosphide; MMICs; Metal-insulator structures; Microwave devices; Microwave integrated circuits; Microwave oscillators; Power generation; Heterojunction bipolar transistors; MMICs; Microwave oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location
Manchester
Print_ISBN
2-9600551-8-7
Type
conf
DOI
10.1109/EMICC.2006.282774
Filename
4057597
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