Title :
Device Simulation on Gate-All-Around Cylindrical Transistor
Author :
Xiao, Deyuan ; Wang, Xi ; Chen, Jing ; Huang, Xiaolu ; Luo, Jiexin ; Wu, Qingqing
Author_Institution :
Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai, China
Abstract :
In this paper, we reported TCAD study on gate-all-around cylindrical (GAAC) transistor for sub-10 nm scaling. The GAAC transistor device physics, TCAD simulation have been discussed. Among all other novel FinFET devices, the gate-all-around cylindrical device can be particularly applied for reducing the problems of the conventional multi-gate FinFET and improving the device performance and the scale down capability.
Keywords :
MOSFET; semiconductor device models; technology CAD (electronics); FinFET devices; TCAD; device simulation; gate-all-around cylindrical transistor; size 10 nm; Doping; FinFETs; Logic gates; Mathematical model; Performance evaluation; Silicon; Device physics; Gate-all-around cylindrical transistor; TCAD Simulation;
Conference_Titel :
System Science, Engineering Design and Manufacturing Informatization (ICSEM), 2010 International Conference on
Conference_Location :
Yichang
Print_ISBN :
978-1-4244-8664-9
DOI :
10.1109/ICSEM.2010.131
