DocumentCode
315688
Title
A new BiCMOS increased full swing converter for low-internal-voltage ULSI systems
Author
Wang, Ching-Sung ; Yuan, Shih-Yi ; Chen, Ke-Homg ; Kuo, Sy-Yen
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
3
fYear
1997
fDate
9-12 Jun 1997
Firstpage
1856
Abstract
In this paper a new BiCMOS increased full swing inverter (IFSI) and a new BiCMOS increased full swing buffer (IFSB) for low voltage/low power ULSI (Ultra Large Scale Integration) systems are proposed. These circuits can operate at low internal voltage (Vint) and have low input signal swing. As long as Vint>|Vt| (assuming Vtn=-Vtp), the circuits can work properly. The proposed BiCMOS IFSC circuits are suitable for high-speed operations. When the capacitor load is larger than 0.6 pf; the propagation delay and the delay power product at different internal voltages are better than previous circuits under the same circuit design parameters. We also establish the relationship between the Kr=Kn/Kp ratio and the circuit area. This can avoid the trial and error step in the circuit sizing operation to reduce the power consumption
Keywords
BiCMOS analogue integrated circuits; ULSI; buffer circuits; delays; power convertors; BiCMOS; capacitor load; circuit area; delay power product; high-speed operations; increased full swing buffer; increased full swing converter; input signal swing; internal voltage; internal voltages; low-internal-voltage ULSI systems; propagation delay; Acceleration; BiCMOS integrated circuits; Capacitors; Circuit synthesis; Energy consumption; Intersymbol interference; Inverters; Low voltage; Propagation delay; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1997. ISCAS '97., Proceedings of 1997 IEEE International Symposium on
Print_ISBN
0-7803-3583-X
Type
conf
DOI
10.1109/ISCAS.1997.621510
Filename
621510
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