Title :
Compact RF Modeling of Multiple-Gate MOSFETs
Author :
Iniguez, B. ; Lazaro, Antonio ; Moldovan, O.
Author_Institution :
Dept. of Electron., Electrics, & Autom. Eng., Univ. Rovira i Virgili, Tarragona
Abstract :
We present a compact modeling scheme for multiple-gate MOSFETs, based on a unified charge control model derived from the 1D Poisson´s equation, which has been extended to the RF regime using the active transmission line approach. Compact expressions of the local small-signal parameters, including noise sources, are used in each segment. The resulting macro-models have been used to study the RF and noise performances of multiple-gate devices
Keywords :
MOSFET; Poisson equation; semiconductor device models; semiconductor device noise; transmission line theory; 1D Poisson´s equation; active transmission line approach; charge control model; compact RF modeling; multiple-gate MOSFET; noise sources; semiconductor device models; Cutoff frequency; FinFETs; Integrated circuit modeling; Length measurement; MOSFETs; Microwave devices; Microwave transistors; Poisson equations; Radio frequency; Semiconductor device modeling; MOS transistors; Modeling; Noise; SOI;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282790
