CMOS Large Signal and RF Noise Model for CAD

Author

Angelov, I. ; Ferndahl, M. ; Ingvarson, F. ; Zirath, H. ; Vickes, H.-O.

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

217

Lastpage

220

Abstract

A compact large-signal model (LS) for high frequency CMOS transistors is proposed and experimentally evaluated with DC, S-parameter, power spectrum measurements and load pool measurements. Very good correspondences between measurements on 90 nm CMOS FETs and simulations were achieved. Due to the low number of model parameters and the careful selection of model equations, the model exhibits excellent convergence behavior, a property important for successful nonlinear circuit simulation of RF circuits. The LS model was extended to model the RF noise and implemented in commercial CAD tool and shows a good correspondence between the measurements and the model

Keywords

MOSFET; S-parameters; circuit CAD; circuit simulation; microwave field effect transistors; semiconductor device models; semiconductor device noise; 90 nm; CAD tool; CMOS FET; CMOS large signal model; DC measurement; RF circuits; RF noise model; S-parameter measurement; excellent convergence behavior; high frequency CMOS transistors; load pool measurements; nonlinear circuit simulation; power spectrum measurements; selection of model equations; Circuit simulation; Convergence; FETs; Frequency measurement; Nonlinear equations; Power measurement; RF signals; Radio frequency; Scattering parameters; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282791

Filename

4057614