DocumentCode :
3157118
Title :
Selective emitter formation using optical thermal heating [of solar cells]
Author :
Slaoui, Abdelilah ; Lachiq, Aziz ; Venture, L. ; Muller, Jean Claude
Author_Institution :
Lab. PHASE, CNRS, Strasbourg, France
fYear :
1996
fDate :
13-17 May 1996
Firstpage :
397
Lastpage :
400
Abstract :
Rapid thermal processing (RTP) using halogen tungsten lamps as a heating source has been successfully applied to the formation of solar cells in one thermal cycle. Here, the authors extend the use of RTP to form high/low doped regions using the properties of the emitting light. They have played with the absorption, reflection and transmittance of the light in order to control the impinging radiation onto the silicon samples. Selective emitters were prepared by these procedures. Sheet resistance variations in the range 20-150 Ω/□ were obtained depending on the processing parameters like lamp power, time and masking procedures
Keywords :
elemental semiconductors; rapid thermal processing; semiconductor device testing; silicon; solar cells; Si; Si solar cells; absorption; halogen tungsten lamps; optical thermal heating; processing parameters; rapid thermal processing; reflection; selective emitter formation; sheet resistance; transmittance; Absorption; Lamps; Lighting control; Optical reflection; Photovoltaic cells; Rapid thermal processing; Silicon; Solar heating; Stimulated emission; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.564027
Filename :
564027
Link To Document :
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