Title :
Advanced High Power Amplifier Chain for X-Band T/R-Modules based on GaN MMICs
Author :
Schuh, P. ; Leberer, R. ; Sledzik, H. ; Oppermann, M. ; Adelseck, B. ; Brugger, H. ; Quay, R. ; Mikulla, M. ; Weimann, G.
Author_Institution :
EADS Deutschland GmbH, Defence Electron., Ulm
Abstract :
Power amplifiers for a next generation of T/R-modules in future active array antennas are realized as monolithically integrated circuits on the bases of novel AlGaN/GaN HEMT structures. Both, driver and high power amplifiers are designed for X-band frequencies. The monolithically integrated circuits (MMICs) are designed, simulated and fabricated using a novel via-hole microstrip technology. Output power levels of 1.6 W (32 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high power amplifier (HPA) are measured. An amplifier chain circuitry, with mounted GaN DA and HPA MMICs, is designed based on a multi-layer LTCC technology
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC; aluminium compounds; gallium compounds; power amplifiers; wide band gap semiconductors; AlGaN-GaN; HEMT structures; MMIC; X-band T/R-modules; amplifier chain circuitry; driver amplifier; high power amplifier; microstrip technology; multilayer LTCC technology; Aluminum gallium nitride; Antenna arrays; Driver circuits; Gallium nitride; HEMTs; High power amplifiers; MMICs; Microstrip antenna arrays; Monolithic integrated circuits; Power amplifiers; GaN; HEMT; High power amplifier; LTCC; MMIC; T/R-Module; X-band;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282797
