DocumentCode
3157240
Title
First Egyptian Workshop on Advancements of Electronic Devices (EWAED) (IEEE Cat. No.02EX600)
fYear
2002
fDate
28-28 Sept. 2002
Keywords
CMOS integrated circuits; MOS capacitors; SRAM chips; application specific integrated circuits; bipolar transistors; ferroelectric storage; nanoelectronics; radiation effects; radiation hardening (electronics); semiconductor device models; thyristor circuits; thyristors; BJT; CMOS ASIC radiation immunity device scaling effects; bipolar junction transistors; ferroelectric memories; generic object-oriented semiconductor device simulators; microthyristor based SRAM cells; single/dual-gate MITT nanometer transistors; total ionizing dose MOS capacitor radiation effects;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Devices, 2002. (EWAED). The First Egyptian Workshop on Advancements of
Conference_Location
Cairo, Egypt
Print_ISBN
977-5031-73-7
Type
conf
DOI
10.1109/EWAED.2002.1177873
Filename
1177873
Link To Document