DocumentCode
3157254
Title
Nonlinear modeling of compound semiconductor HEMTs, state of the art
Author
Curtice, W.R.
fYear
2010
fDate
23-28 May 2010
Firstpage
1
Lastpage
1
Abstract
Summary form only given. This paper will review the state-of-the-art for modeling compound semiconductor HFETs and HEMTs for microwave power applications.
Keywords
high electron mobility transistors; microwave field effect transistors; semiconductor device models; compound semiconductor HEMT; compound semiconductor HFET modelling; microwave power; nonlinear modeling; HEMTs; MODFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5518285
Filename
5518285
Link To Document